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UTT100N05

Unisonic Technologies
Part Number UTT100N05
Manufacturer Unisonic Technologies
Description 50V N-CHANNEL POWER MOSFET
Published Nov 9, 2012
Detailed Description UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT100N05 100A, 50V N-CHANNEL POWER MOSFET „ DESCRIPTION Power MOSFET The U...
Datasheet PDF File UTT100N05 PDF File

UTT100N05
UTT100N05

Overview
UNISONIC TECHNOLOGIES CO.
, LTD Preliminary UTT100N05 100A, 50V N-CHANNEL POWER MOSFET „ DESCRIPTION Power MOSFET The UTC UTT100N05 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with minimum on-state resistance and superior switching performance.
„ FEATURES * RDS(ON)= 7mΩ @ VGS=10V, ID= 50A RDS(ON)= 10mΩ @ VGS=4.
5V, ID=50A * High switching speed * Improved dv/dt capability „ ORDERING INFORMATION Package TO-220 www.
DataSheet.
net/ Ordering Number Lead Free Halogen Free UTT100N05L-TA3-T UTT100N05G-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source 1 G Pin Assignment 2 3 D S Packing Tube www.
unisonic.
com.
tw Copyright © 2011 Unisonic Technologies Co.
, Ltd 1 of 3 QW-R502-688.
a Datasheet pdf - http://www.
DataSheet4U.
co.
kr/ UTT100N05 „ Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage SYMBOL RATINGS UNIT VDSS 50 V VGSS ±20 V 100 A Continuous ID Drain Current Pulsed IDM 400 A Avalanche Energy Single Pulsed EAS 875 mJ Power Dissipation PD 83 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ THERMAL CHARACTERISTICS SYMBOL θJA θJC RATINGS 62.
5 1.
5 UNIT °C/W °C/W PARAMETER Junction to Ambient Junction to Case „ ELECTRICAL CHARACTERISTICS SYMBOL BVDSS IDSS IGSS VGS(TH) RDS(ON) TEST CONDITIONS ID=250µA, VGS=0V VDS=50V, VGS=0V VGS=+20V, VDS=0V VGS=-20V, VDS=0V VDS=VGS, ID=250µA VGS=10V, ID=50A VGS=4.
5V, ID=50A www.
DataSheet.
net/ PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Forward Gate-Source Leakage Current Reverse ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance MIN 50 TYP MAX UNIT V µA nA nA V mΩ mΩ pF pF pF nC nC nC ns ns ns ns A A V 10 +100 -100 ...


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