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UTT100N06

Unisonic Technologies
Part Number UTT100N06
Manufacturer Unisonic Technologies
Description N-CHANNEL POWER MOSFET
Published Nov 9, 2012
Detailed Description UNISONIC TECHNOLOGIES CO., LTD UTT100N06 100A, 60V N-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC UTT100N...
Datasheet PDF File UTT100N06 PDF File

UTT100N06
UTT100N06

Overview
UNISONIC TECHNOLOGIES CO.
, LTD UTT100N06 100A, 60V N-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC UTT100N06 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance.
It also can withstand high energy pulse in the avalanche and commutation mode.
 FEATURES * Fast switching speed * RDS(ON) < 7.
0mΩ @ VGS=10V, ID=50A * 100% avalanche tested * Improved dv/dt capability  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT100N06L-TA3-T UTT100N06G-TA3-T UTT100N06L-TF2-T UTT100N06G-TF2-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F2 Pin Assignment 123 GD S GD S Packing Tube Tube www.
unisonic.
com.
tw Copyright © 2018 Unisonic Technologies Co.
, Ltd 1 of 5 QW-R502-509.
E UTT100N06 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS VGSS 60 V ±20 V Drain Current Continuous Pulsed ID IDM 100 A 400 A Avalanche Energy Peak Diode Recovery dv/dt Single Pulsed EAS dv/dt 450 mJ 6 V/ns Power Dissipation TO-220 TO-220F2 PD 100 W 63 W Junction Temperature Storage Temperature TJ TSTG +150 -55 ~ +150 °C °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 THERMAL CHARACTERISTICS PARAMETER Junction to Ambient Junction to Case TO-220 TO-220F2 SYMBOL θJA θJC RATINGS 62.
5 1.
5 1.
98 UNIT °C/W °C/W °C/W  ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate- Source Leakage Current Forward Reverse BVDSS IDSS IGSS ID=250µA, VGS=0V VDS=60V, VGS=0V VGS=+20V, VDS=0V VGS=-20V, VDS=0V ON ...


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