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UTT100N08

Unisonic Technologies
Part Number UTT100N08
Manufacturer Unisonic Technologies
Description N-CHANNEL POWER MOSFET
Published Nov 9, 2012
Detailed Description UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT100N08 N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION Power MOSFET...
Datasheet PDF File UTT100N08 PDF File

UTT100N08
UTT100N08

Overview
UNISONIC TECHNOLOGIES CO.
, LTD Preliminary UTT100N08 N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION Power MOSFET The UTC UTT100N08 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance.
It also can withstand high energy pulse in the avalanche and commutation mode.
„ FEATURES * Fast switching speed * RDS(ON)= 7mΩ @ VGS=10V * Work below 175°C * 100% avalanche tested * Improved dv/dt capability „ SYMBOL 2.
Drain www.
DataSheet.
net/ 1.
Gate 3.
Source „ ORDERING INFORMATION Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube Ordering Number Lead Free Halogen Free UTT100N08L-TA3-T UTT100N08G-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source UTT100N08L-TA3-T (1)Packing Type (2)Package Type (3)Lead Free (1) T: Tube (2) TA3: TO-220 (3) G: Halogen Free, L: Lead Free www.
unisonic.
com.
tw Copyright © 2012 Unisonic Technologies Co.
, Ltd 1 of 3 QW-R502-727.
a Datasheet pdf - http://www.
DataSheet4U.
co.
kr/ UTT100N08 „ Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 80 V Gate-Source Voltage VGSS ±20 V Continuous ID 100 A Drain Current Pulsed IDM 400 A Avalanche Energy Single Pulsed EAS 875 mJ Peak Diode Recovery dv/dt dv/dt 6 V/ns Power Dissipation PD 83 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ THERMAL DATA SYMBOL θJA θJC RATINGS 62.
5 1.
5 UNIT °C/W °C/W PARAMETER Junction to Ambient Junction to Case „ ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) MIN 80 10 +100 -100 1 7 1500 1060 700 500 50 33 90 130 768 280 30 100 400 0.
65 1.
0 1.
3 1.
5 2 3 12 TYP MAX UNIT V µA nA nA V mΩ pF pF pF nC nC nC ns ns ns ...


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