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2N3773 Datasheet PDF


Part Number 2N3773
Manufacturer Comset Semiconductor
Title NPN Power Transistor
Description NPN 2N3773 HIGH POWER TRANSISTOR The 2N3773 is silicon planar NPN transistor in Jedec TO-3 metal case. They are intended for linear amplifiers and...
Features eakdown collector current Test Condition(s) Min 140 15 5 1.5 Typ - Max 2 2 Unit V mA mA IC= 200 mA, IB = 0 VCE= 140 V, IB= 0 VCE= 140 V, VBE= -1.5V VCE= 140 V, VBE= -1.5V Tcase = 150°C VEB= 7 V, IC= 0 IC= 8 A, VCE= 4 V IC= 16 A, VCE= 4 V IC= 8 A, IB= 800 mA IC= 16 A, IB= 3.2 A IC= 8 A, VCE= 4 ...

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Datasheet 2N3773 PDF File








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2N3009 : 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 .

2N3009 : 2N3009 (SILICON) 2N3013 2N3013JAN AVAILABLE 2N3014 NPN silicon epitaxial switching transistors designed for high-speed, medium-power saturated switching applications MAXIMUM RATINGS CASE 27 (TO·52) Collector Connected to Case Rating Collector-Emitter Voltage2N3009, 2N3013 2N3014 Collector-Emitter Voltage Symbol VCEO * VCES Collector-Base Voltage VCB Emitter-Base Voltage 2N3009 2N3013. 2N3014 YEB Collector Current - Continuous (lOlls pulse) Peak Total Device DiSSiPation@TA • 25'C Derate above 25' C IC PD Total Device DiSSipation@TC • 25' C @TC = 100'C Derate above 2SoC PD Operating and Storage Junction Temperature Range TJ, Tstg * Applicable from 0.01 mA to 10 mA (Pulsed) .

2N3010 : 2N3010 (SILICON) CASE 22 (TO-18) NPN silicon low-power transistor primarily designed for high-speed, saturated switching applications. Collector connected to case MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage* VCEO* Collector-Emitter Voltage VCES Collector-Base Voltage VCB Emitter-Base Voltage VEB Collector Current - Continuous IC Total Device Dissipation @TA = 25°C Derate above 25° C Operating and Storage Junction Temperature Range PD TJ , Tstg * Applicable from 0.01 mAdc to 10 mAdc (Pulsed). Value 6.0 11 15 4_0 50 0.30 1.71 -65 to +200 Unit Vdc Vdc Vdc Vdc mAdc Watt mW/oC °c FIGURE 1 - TURN-ON AND TURN·OFF TIME TEST CIRCUIT Vee = +1.0 V TO OSCILLOSCOPE RISE T.

2N3011 : The CENTRAL SEMICONDUCTOR 2N3011 is a silicon epitaxial planar NPN transistor designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current (tp=10μs) Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCES VCEO VEBO IC ICM PD PD TJ, Tstg ΘJA ΘJC 30 30 12 5.0 200 500 360 1.2 -65 to +200 486 146 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICES .

2N3011 : 2N3011 Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 31 2 1 – Emitter TO18 (TO206AA) PINOUTS 2 – Base 3 – Collector Bipolar NPN Device. VCEO = 12V IC = 0.2A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications Parameter VCEO* IC(CONT) hFE ft PD Test Conditions @ (VCE / IC) * Maximum Working Voltage Min. Typ. 400M Max. 12 0.2 0.36 Units V A Hz W This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk. Se.

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2N3012 : Dimensions in mm (inches). m o .c U 4 t e e h S a at .D w w w 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) 2N3012 Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 1 – Emitter Parameter VCEO* IC(CONT) hFE ft Test Conditions @ 0.5/30m (VCE / IC) m W o .c U * Maximum Working Voltage 4 t e e h This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk. S a at .D w w Semelab plc. w PD 0.36 Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk m o .c U 4 t e e h S a t a .D w w w VCEO = 12V IC = 0.2A 3 1 2 Bipolar PNP Device. All.

2N3012 : BVCBO BVCEO BVEBO ICBO @ VCB (V) (V) (V) (µA) (V) MIN MIN MIN MAX *ICES **ICEV hFE @ IC @ VCE VCE (SAT) @ IC Cob fT NF ton (mA) (V) (V) (mA) (pF) (MHz) (dB) (ns) MIN MAX MAX MAX MIN MAX MAX toff (ns) MAX 2N2896 NPN AMPL/SWITCH 140 2N2897 NPN AMPL/SWITCH 60 2N2906A PNP AMPL/SWITCH 60 2N2907A PNP AMPL/SWITCH 60 2N2952 NPN AMPL/SWITCH 60 2N3009 NPN SAT SWITCH 40 2N3011 NPN SAT SWITCH 30 2N3012 PNP SAT SWITCH 12 2N3013 NPN SAT SWITCH 40 2N3014 NPN SAT SWITCH 40 2N3073 PNP AMPL/SWITCH 60 2N3115 NPN AMPL/SWITCH 20 2N3116 NPN AMPL/SWITCH 20 2N3117 NPN AMPL/SWITCH 60 2N3121 PNP AMPL/SWITCH 45 2N3135 PNP AMPL/SWITCH 50 2N3136 PNP AMPL/SWITCH 50 2N3209 PNP SAT SWITCH 20 2N3210 NPN SAT SWITCH 40.

2N3012 : 2N3012 CASE 22-03, STYLE 1 TO-18 (TO-206AA) SWITCHING TRANSISTOR PNP SILICON Refer to 2N869A for graphs. MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation (a TA = 25°C Derate above 25°C @Total Device Dissipation Tq = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol v CEO vCBO VEBO 'C PD Pd Tj, Tst g Value 12 12 4.0 200 0.36 2.06 1.2 6.85 -65 to +200 Unit Vdc Vdc Vdc mAdc Watts mW/°C Watts mW/°C °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) OFF CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage Oc = 10 |j.Adc, Vbe = 0) Col.

2N3012CSM : Dimensions in mm (inches). 0.51 ± 0.10 (0.02 ± 0.004) 2.54 ± 0.13 (0.10 ± 0.005) m o .c U 4 t e e h S a at .D w w w 0.31 rad. (0.012) 2N3012CSM 3 2 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) 1 – Base Parameter VCEO* IC(CONT) hFE ft Test Conditions @ 0.5/30m (VCE / IC) m W o .c U * Maximum Working Voltage 4 t e e h This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk. S a at .D w w Semelab plc. w PD 0.36 Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk m o .c U 4 t e e h S a t a .D w w w 1 0.76 ± 0.15 (0.03 ± 0.006) 0.31 rad. (0.012) A A= 1.02 ± 0.10 (0.04 ± 0.004) 1.40 (.

2N3013 : 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 .

2N3013 : .




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