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IRF640

Comset Semiconductors
Part Number IRF640
Manufacturer Comset Semiconductors
Description N-Channel Enhancement Mode Power MOS Transistors
Published Dec 11, 2012
Detailed Description SEMICONDUCTORS IRF640 N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS FEATURE N channel in a plastic TO220 package. Th...
Datasheet PDF File IRF640 PDF File

IRF640
IRF640

Overview
SEMICONDUCTORS IRF640 N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS FEATURE N channel in a plastic TO220 package.
They are intended for use in high speed power switching, low voltage, relay drivers and general purpose switching applications.
DC-DC & DC-AC converters for telecom, industrial and lighting equipment.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS http://www.
DataSheet4U.
net/ Symbol VDS IDS IDM IAR EAS EAR VGS RDS(on) PT tJ tstg Ratings Drain-Source Voltage Continuous Drain Current TC= 37°C Pulsed Drain Current TC= 25°C Avalanche Current, Limited by Tjmax Avalanche Energy, Single pulse ID = 18 A, VDD = 50 V, Tj = 25°C Avalanche Energy, Periodic Limited by Tjmax Gate-Source Voltage Drain-Source on Resistance Power Dissipation at Case Temperature TC= 25°C Operating Temperature Storage Temperature range Value 200 18 72 18 280 13 20 0.
18 125 150 -55 to +150 Unit V A mJ V Ω W °C THERMAL CHARACTERISTICS Symbol RthJC RthJA Ratings Thermal Resistance, junction-case Thermal Resistance, junction-ambient Value 1 62.
5 Unit °C/W 1/3 09/11/2012 COMSET SEMICONDUCTORS datasheet pdf - http://www.
DataSheet4U.
net/ SEMICONDUCTORS IRF640 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VDSS VGS(th) IDSS Ratings Drain-Source Breakdown Voltage Gate-threshold Voltage Zero Gate Voltage Drain Current Gate-Source leakage Current Drain-Source on Resistance Test Condition(s) Min 200 2 - Typ 3 0.
15 Max 4 25 Unit V V µA ID= 250 µA, VGS= 0 V ID= 250 µA, VGS= VDS VDS= 200 V, VGS= 0 V Tj= 25 °C VDS= 200 V, VGS= 0 V Tj= 125 °C VGS= 20 V, VDS= 0 V ID= 10 A, VGS= 10 V 250 100 0.
18 nA Ω IGSS RDS(on) DYNAMIC CHARACTERISTICS Symbol gfs CISS COSS CRSS td(on) tr td(off) tf Ratings Transconductance Input Capacitance Output Capacitance Reverse transfer Capacitance Turn-on Delay Time Rise time Turn-off Delay Time Fall Time Test Condition(s) http://www.
DataSheet4U.
net/ Min 7 - Typ 11 1200 200 60 20 145 145 110 Max Unit 1560 260 80 50 300 300 230 S VDS =...


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