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2SC5241

Part Number	2SC5241
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistors
Published	Aug 31, 2013
Detailed Description	isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min) ·Fast Switc...
Datasheet	2SC5241 PDF File

Overview

isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min) ·Fast Switching Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 600 VCEO Collector-Emitter Voltage 450 VEBO Emitter-Base Voltage 7 IC Collector Current-Continuous 5 ICM Collector Current-Peak 10 IB Base Current-Continuous 2 IBM Base Current-Peak 4 PT Total Power Dissipation @ TC=25℃ 30 TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 UNIT V V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 4.
16 ℃/W 2SC5241 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRIC...

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