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IRF9910

International Rectifier
Part Number IRF9910
Manufacturer International Rectifier
Description Power MOSFET
Published Oct 23, 2013
Detailed Description PD - 95869 IRF9910 HEXFET® Power MOSFET Applications l Dual SO-8 MOSFET for POL converters in desktop, servers, graphic...
Datasheet PDF File IRF9910 PDF File

IRF9910
IRF9910

Overview
PD - 95869 IRF9910 HEXFET® Power MOSFET Applications l Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box VDSS 20V Q1 13.
4m:@VGS = 10V Q2 9.
3m:@VGS = 10V RDS(on) max ID 10A 12A Benefits l Very Low RDS(on) at 4.
5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 20V VGS Max.
Gate Rating   6   *   6   *  '   '   '   '  SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 10 8.
3 83 2.
0 1.
3 0.
016 -55 to + 150 W/°C °C Q1 Max.
20 ± 20 Q2 Max.
Units V 12 9.
9 98 W A c Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Resistance Parameter RθJL RθJA Junction-to-Drain Lead Junction-to-Ambient Typ.
––– ––– Max.
20 62.
5 ...


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