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2N3725

Part Number	2N3725
Manufacturer	STMicroelectronics
Description	Silicon Planar Epitaxial transistor
Published	Mar 23, 2005
Detailed Description	2N3725 HIGH VOLTAGE, HIGH CURRENT SWITCH DESCRIPTION The 2N3725 is a silicon planar epitaxial transistor in TO-39 metal ...
Datasheet	2N3725 PDF File

Overview

2N3725 HIGH VOLTAGE, HIGH CURRENT SWITCH DESCRIPTION The 2N3725 is a silicon planar epitaxial transistor in TO-39 metal case It is a high-voltage, high current switch used for memory applications requiring breakdown voltages up to 50 V and operating currents to 1 A.
Fast switching times are assured because of the high minimum fT (300 MHz) and tight control on storage time.
TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CES V CEO V EBO IC Pt o t T s t g, T j January 1989 Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (V BE = 0) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Current Total Power Dissipation at T amb ≤ 25 °C at T c as e ≤ 25 °C Storage and Junction Temperature Value 80 80 50 6 1 0.
8 3.
5 – 65 to 200 Unit V V V V A W W °C 1/6 2N3725 THERMAL DATA R t h j- cas e R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 50 220 °C/W °C/W ELECTRICAL CHARACTERISTICS (T...

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