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AON6506

Alpha & Omega Semiconductors
Part Number AON6506
Manufacturer Alpha & Omega Semiconductors
Description N-Channel MOSFET
Published Oct 31, 2013
Detailed Description AON6506 30V N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(o...
Datasheet PDF File AON6506 PDF File

AON6506
AON6506

Overview
AON6506 30V N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.
5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.
5V) 30V 36A < 2.
6mΩ < 3.
8mΩ Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested DFN5X6 Top View Bottom View 1 2 3 4 Top View 8 7 6 5 D G S PIN1 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current VDS Spike Power Dissipation B Power Dissipation A C Maximum 30 ±20 36 28 144 33 26 60 90 36 83 33 4.
2 2.
7 -55 to 150 Units V V A VGS TC=25° C TC=100° C TA=25° C C TA=70° ID IDM IDSM IAS EAS VSPIKE PD PDSM TJ, TSTG 100ns TC=25° C TC=100° C TA=25° C TA=70° C A A mJ V W W ° C Avalanche energy L=0.
05mH C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 24 53 1.
2 Max 30 64 1.
5 Units ° C/W ° C/W ° C/W Rev 0: Feb.
2012 www.
aosmd.
com Page 1 of 6 Free Datasheet http://www.
datasheet4u.
com/ AON6506 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V C TJ=55° VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.
5V, ID=20A Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V TJ=125° C 1.
2 1.
7 2.
1 2.
4 2.
9 85 0.
7 1 36 2719 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.
9 1204 169 2 44 VGS=10V, VDS=15V, ID=20A 21 9 7 9.
7 VGS=10V, VDS=15V, RL=0.
75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs 5.
2 32.
5 10.
3 19.
6 42.
7 3 60 28 Min 30 1 5 ±1...


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