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AON6512

Alpha & Omega Semiconductors
Part Number AON6512
Manufacturer Alpha & Omega Semiconductors
Description N-Channel MOSFET
Published Oct 31, 2013
Detailed Description AON6512 30V N-Channel MOSFET General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on)...
Datasheet PDF File AON6512 PDF File

AON6512
AON6512

Overview
AON6512 30V N-Channel MOSFET General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.
5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.
5V) Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested 30V 210A < 1.
7mW < 2.
4mW Top View DFN5X6 Bottom View PIN1 Top View S1 S2 S3 G4 8D 7D 6D 5D G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.
05mH C EAS VDS Spike 100ns VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 210 130 450 54 43 70 123 36 118 45 7.
4 4.
7 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 14 40 Maximum Junction-to-Case Steady-State RqJC 0.
8 Max 17 55 1.
05 D S Units V V A A A mJ V W W °C Units °C/W °C/W °C/W Rev.
2.
0: April 2022 www.
aosmd.
com Page 1 of 6 AON6512 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 mA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1 1.
5 2 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C 1.
4 1.
7 mW 1.
9 2.
3 VGS=4.
5V, ID=20A 1.
9 2.
4 mW gFS Forward Transconductance VDS=5V, ID=20A 85 S VSD Diode Forward Volt...


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