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AON6514

Alpha & Omega Semiconductors
Part Number AON6514
Manufacturer Alpha & Omega Semiconductors
Description 30V N-Channel MOSFET
Published Jan 12, 2016
Detailed Description AON6514 30V N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(o...
Datasheet PDF File AON6514 PDF File

AON6514
AON6514

Overview
AON6514 30V N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.
5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.
5V) Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested 30V 30A < 5mΩ < 8.
5mΩ Top View DFN5X6 Bottom View PIN1 Top View 18 27 36 45 G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain CurrentG TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.
05mH C IDSM IAS EAS VDS Spike 100ns VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 30 23 120 23 18 32 26 36 25 10 4.
1 2.
6 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 24 53 3.
5 Max 30 64 5 D S Units V V A A A mJ V W W °C Units °C/W °C/W °C/W Rev 0: Oct 2011 www.
aosmd.
com Page 1 of 6 AON6514 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 µA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA 1.
2 1.
8 2.
2 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C 4.
1 5 5.
6 6.
8 mΩ VGS=4.
5V, ID=20A 6.
7 8.
5 mΩ gFS Forward Transconductance VDS=5V, ID=20A 91 S VSD Diode Forward Voltage IS=1A,VGS=0V 0.
7 1 V IS Maxi...


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