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AON6538

Alpha & Omega Semiconductors
Part Number AON6538
Manufacturer Alpha & Omega Semiconductors
Description N-Channel MOSFET
Published Oct 31, 2013
Detailed Description AON6538 30V N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(o...
Datasheet PDF File AON6538 PDF File

AON6538
AON6538

Overview
AON6538 30V N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.
5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.
5V) 30V 75A < 4mΩ < 7.
4mΩ Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested DFN5X6 Top View Bottom View 1 2 3 4 Top View D 8 7 6 5 G S PIN1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy L=0.
05mH C VDS Spike Power Dissipation B Power Dissipation A 100ns TC=25°C TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case C Maximum 30 ±20 75 48 185 30 24 34 29 36 35.
5 14 5.
6 3.
6 -55 to 150 Units V V A VGS TC=25°C TC=100°C TA=25°C TA=70°C ID IDM IDSM IAS EAS VSPIKE PD PDSM TJ, TSTG A A mJ V W W °C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 18 40 2.
75 Max 22 55 3.
5 Units °C/W °C/W °C/W Rev0: Oct 2012 www.
aosmd.
com Page 1 of 6 Free Datasheet http://www.
datasheet4u.
com/ AON6538 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.
5V, ID=20A Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V TJ=125°C 1.
6 2 3.
3 4.
6 5.
8 68 0.
7 1 40 1315 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.
7 570 95 1.
4 20.
5 VGS=10V, VDS=15V, ID=20A 10 5 4.
5 7 VGS=10V, VDS=15V, RL=0.
75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs 7 21.
5 5.
5 14 20.
5 2.
2 30 15 Min 30 1 5 ±100 2.
4 4 5.
6 7.
4 Typ ...


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