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2SD1250

Kexin
Part Number 2SD1250
Manufacturer Kexin
Description Silicon NPN Transistor
Published Nov 4, 2013
Detailed Description SMD Type Transistors Silicon NPN Triple Diffusion Planar Type 2SD1250 TO-252 +0.15 1.50 -0.15 Unit: mm 2.30 +0.8 0.50...
Datasheet PDF File 2SD1250 PDF File

2SD1250
2SD1250

Overview
SMD Type Transistors Silicon NPN Triple Diffusion Planar Type 2SD1250 TO-252 +0.
15 1.
50 -0.
15 Unit: mm 2.
30 +0.
8 0.
50-0.
7 +0.
1 -0.
1 6.
50 +0.
2 5.
30-0.
2 +0.
15 -0.
15 Features +0.
2 9.
70 -0.
2 +0.
15 0.
50 -0.
15 Low collector-emitter saturation voltage VCE(sat) +0.
1 0.
80-0.
1 0.
127 max 2.
3 +0.
15 4.
60-0.
15 +0.
1 0.
60-0.
1 +0.
28 1.
50 -0.
1 +0.
25 2.
65 -0.
1 +0.
15 5.
55 -0.
15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation TC = 25 Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating 200 150 6 2 3 1.
3 30 150 -55 to +150 W W Unit V V V A Electrical Characteristics Ta = 25 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Base-emitter voltage Collector-emitter saturation voltage Transition frequency Symbol VCBO VCEO VEBO ICBO IEBO hFE VBE VCE(sat) fT Testconditons IC = 500 ìA, IE = 0 IC =5 mA, IB = 0 IE = 500 ìA, IC = 0 VCB = 200 V, IE = 0 VEB = 4 V, IC = 0 VCE = 10 V, IC = 150 mA VCE = 10 V, IC = 400 mA VCE = 10 V, IC = 400 mA IC = 500 mA, IB = 50 mA VCE = 10 V, IC = 0.
5 A, f = 1 MHz 20 60 50 1.
0 1.
0 V V MHz Min 200 150 6 50 50 240 Typ Max Unit V V V ìA ìA hFE Classification Rank hFE Q 60 to 140 P 100 to 240 3 .
8 0 High forward current transfer ratio hFE which has satisfactory linearity www.
kexin.
com.
cn 1 Free Datasheet http://www.
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