DatasheetsPDF.com

2SD2651

Renesas
Part Number 2SD2651
Manufacturer Renesas
Description Silicon NPN Epitaxial Transistor
Published Nov 12, 2013
Detailed Description 2SD2651 Silicon NPN Epitaxial High Voltage Amplifier REJ03G0809-0200 (Previous ADE-208-976) Rev.2.00 Aug.10.2005 Featur...
Datasheet PDF File 2SD2651 PDF File

2SD2651
2SD2651


Overview
2SD2651 Silicon NPN Epitaxial High Voltage Amplifier REJ03G0809-0200 (Previous ADE-208-976) Rev.
2.
00 Aug.
10.
2005 Features • High breakdown voltage VCEO = -300V min Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1.
Emitter 2.
Collector 3.
Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 300 300 5 50 750 150 -55 to +150 Unit V V V mA mW °C °C Rev.
2.
00 Aug 10, 2005 page 1 of 5 Free Datasheet http://www.
datasheet4u.
com/ 2SD2651 Electrical Characteristics (Ta = 25°C) Item Collector cutoff current Emitter cutoff current Base to emitter voltage DC current transfer ratio Collector to emitter saturation voltage Symbol ICBO ICEO IEBO VBE hFE VCE(sat) Min — — — — 80 — Typ — — — — — — Max 0.
1 0.
1 10 0.
75 160 0.
5 Unit µA µA µA V — V Test Conditions VCB = 300V, IE = 0 VCE = 300V, RBE = ∞ VEB = 5 V, IC = 0 VCE = 6V, I C = 1mA VCE = 6V, IC = 2mA IC = 30mA, IB = 3mA Rev.
2.
00 Aug 10, 2005 page 2 of 5 Free Datasheet http://www.
datasheet4u.
com/ 2SD2651 Main Characteristics Maximum Collector Dissipation Curve 1.
5 10 Typical Output Characteristics 100µA 60µA Pulse Test 50µA 40µA Collector Dissipation PC (W) Collector Current IC (mA) 8 80µA 1.
0 6 4 0.
5 30µA 20µA IB = 10 µA 2 0 50 100 150 0 20 40 60 80 100 Ambient Temperature Ta (°C) Collector to emitter voltage VCE (V) DC Current Transfer Ratio vs.
Collector Current 1,000 Typical Transfer Characteristics 100 Ta = 75 °C DC Current Transfer Ratio hFE Collector Current IC (mA) 10 25°C -25°C Ta = 75°C 25°C –25°C 100 1.
0 VCE = 6 V Pulse Test 0.
1 10 VCE = 6 V Pulse Test 0.
01 0 0.
2 0.
4 0.
6 0.
8 1.
0 1 0.
1 1.
0 10 100 Base to Emitter Voltage VBE (V) Collector to Emitter Saturation Voltage vs.
Collector Current Collector Current IC (mA) Gain Bandwidh Product vs.
Col...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)