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AOT282L

Alpha & Omega Semiconductors
Part Number AOT282L
Manufacturer Alpha & Omega Semiconductors
Description 80V N-Channel MOSFET
Published Jan 11, 2014
Detailed Description AOT282L/AOB282L 80V N-Channel MOSFET General Description The AOT282L & AOB282L uses trench MOSFET technology that is un...
Datasheet PDF File AOT282L PDF File

AOT282L
AOT282L

Overview
AOT282L/AOB282L 80V N-Channel MOSFET General Description The AOT282L & AOB282L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.
Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss.
This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) 80V 105A < 3.
5mΩ < 5.
2mΩ (< 3.
2mΩ ) (< 4.
9mΩ ∗) ∗ 100% UIS Tested 100% Rg Tested TO220 Top View Bottom View D D Top View TO-263 D2PAK Bottom View D D D G G D S S D G S G S G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Maximum 80 ±20 105 82 420 18.
5 14.
5 80 320 272.
5 136 2.
1 1.
3 -55 to 175 Units V V A VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAS EAS PD PDSM TJ, TSTG A A mJ W W ° C Avalanche energy L=0.
1mH C TC=25° C Power Dissipation B Power Dissipation A TC=100° C TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case * Surface mount package TO263 Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 12 48 0.
35 Max 15 60 0.
55 Units ° C/W ° C/W ° C/W Rev 0 : August 2012 www.
aosmd.
com Page 1 of 6 Free Datasheet http://www.
datasheet4u.
com/ AOT282L/AOB282L Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=80V, VGS=0V C TJ=55° VDS=0V, VGS=±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A TO220 VGS=6V, ID=20A TO220 VGS=10V, ID=20A TO263 VGS=6V, ID=20A TO263 VDS=5V, ID=20A IS=1A,VGS=0V TJ=125° C 2.
2 420 2.
9 4.
5 3.
7 2.
6 3.
4 60 0.
68 3.
5 5.
5 5.
2 3.
2 4.
9 S...


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