DatasheetsPDF.com

AOT286L

Alpha & Omega Semiconductors
Part Number AOT286L
Manufacturer Alpha & Omega Semiconductors
Description 80V N-Channel MOSFET
Published Jan 11, 2014
Detailed Description AOT286L/AOB286L 80V N-Channel MOSFET General Description Product Summary The AOT286L/AOB286L uses Trench MOSFET techn...
Datasheet PDF File AOT286L PDF File

AOT286L
AOT286L

Overview
AOT286L/AOB286L 80V N-Channel MOSFET General Description Product Summary The AOT286L/AOB286L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.
Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss.
This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) 100% UIS Tested 100% Rg Tested 80V 70A < 6.
0mΩ < 7.
9mΩ (< 5.
7mΩ∗) (< 7.
6mΩ∗) Top View D AOT286L TO220 Bottom View D G DS S DG Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.
1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Top View AOB286L TO-263 Bottom View D S G D G G S Maximum 80 ±20 70 55 245 13 10.
5 50 125 167 83 2.
1 1.
3 -55 to 175 D S Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 12 48 Maximum Junction-to-Case Steady-State RθJC 0.
7 Max 15 60 0.
9 Units °C/W °C/W °C/W * Surface mount package TO263 Rev.
2 0: May 2013 www.
aosmd.
com Page 1 of 6 AOT286L/AOB286L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current RDS(ON) Static Drain-Source On-Resistance Conditions Min Typ Max Units ID=250µA, VGS=0V 80 VDS=80V, VGS=0V TJ=55°C V...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)