DatasheetsPDF.com

AOT288L

Alpha & Omega Semiconductors
Part Number AOT288L
Manufacturer Alpha & Omega Semiconductors
Description 80V N-Channel MOSFET
Published Jan 11, 2014
Detailed Description AOT288L/AOB288L/AOTF288L 80V N-Channel MOSFET General Description The AOT288L & AOB288L & AOTF288L uses trench MOSFET t...
Datasheet PDF File AOT288L PDF File

AOT288L
AOT288L


Overview
AOT288L/AOB288L/AOTF288L 80V N-Channel MOSFET General Description The AOT288L & AOB288L & AOTF288L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.
Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss.
This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) 80V 46A / 43A < 9.
2mΩ(< 8.
9mΩ*) <12.
5mΩ(< 12.
2mΩ*) 100% UIS Tested 100% Rg Tested Top View TO-220 TO-220F D TO-263 D2PAK D G D S AOTF288L G D S AOB288L G S S AOT288L G Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol AOT288L/AOB288L VDS Drain-Source Voltage 80 Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C C AOTF288L Units V V VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAS EAS PD PDSM TJ, TSTG 93.
5 46.
5 TC=25° C 46 36 ±20 43 30 160 10.
5 8 35 61 35.
5 17.
5 2.
1 1.
3 -55 to 175 A A A mJ W W ° C Avalanche energy L=0.
1mH C Power Dissipation B Power Dissipation A TC=100° C TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case * Surface mount package TO263 Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC AOT288L/AOB288L 15 60 1.
6 AOTF288L 15 60 4.
2 Units ° C/W ° C/W ° C/W Rev 0 : Dec.
2012 www.
aosmd.
com Page 1 of 7 Free Datasheet http://www.
datasheet4u.
com/ AOT288L/AOB288L/AOTF288L Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=80V, VGS=0V C TJ=55° VDS=0V, VGS=±20V VDS=VGS,ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TO220/TO220F VGS=6V, ID=20A TO220/TO220F VGS=10V, ID=20A TO263...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)