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CEB02N65A

CET
Part Number CEB02N65A
Manufacturer CET
Description N-Channel Enhancement Mode Field Effect Transistor
Published Apr 22, 2014
Detailed Description N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP02N65A CEB02N65A CEF02N65A VDSS 650V 650V 650V RDS(O...
Datasheet PDF File CEB02N65A PDF File

CEB02N65A
CEB02N65A

Overview
N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP02N65A CEB02N65A CEF02N65A VDSS 650V 650V 650V RDS(ON) 10.
5Ω 10.
5Ω 10.
5Ω ID 1.
3A 1.
3A 1.
3A d @VGS 10V 10V 10V CEP02N65A/CEB02N65A CEF02N65A PRELIMINARY Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D D G G D S G CEP SERIES TO-220 S CEB SERIES TO-263(DD-PAK) G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Tc = 25 C unless otherwise noted Limit Symbol TO-220/263 TO-220F VDS VGS ID IDM e PD TJ,Tstg 1.
3 0.
8 5.
2 41 0.
33 -55 to 150 650 Units V V ±30 1.
3 0.
8 d 5.
2 d 27 0.
22 A A A W W/ C C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA 3 62.
5 Limit 4.
5 65 Units C/W C/W This is preliminary information on a new product in development now .
Details are subject to change without notice .
1 Rev 1.
2011.
Oct http://www.
cetsemi.
com Free Datasheet http://www.
Datasheet4U.
com Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage CEP02N65A/CEB02N65A CEF02N65A Tc = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) Test Condition VGS = 0V, ID = ...


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