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CEB02N6G

CET
Part Number CEB02N6G
Manufacturer CET
Description N-Channel MOSFET
Published Sep 22, 2015
Detailed Description CEP02N6G/CEB02N6G CEF02N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP02N6G CEB02N6G CEF02N6G...
Datasheet PDF File CEB02N6G PDF File

CEB02N6G
CEB02N6G

Overview
CEP02N6G/CEB02N6G CEF02N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP02N6G CEB02N6G CEF02N6G VDSS 600V 600V 600V RDS(ON) 5Ω 5Ω 5Ω ID 2.
2A 2.
2A 2.
2A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D DG GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Tc = 25 C unless otherwise noted Symbol Limit TO-220/263 VDS 600 VGS ±30 ID 2.
2 1.
4 IDM e 8.
8 60 PD 0.
48 TO-220F 2.
2 d 1.
4d 8.
8 d 33 0.
26 Single Pulsed Avalanche Energy g Single Pulsed Avalanche Current g Operating and Store Temperature Range EAS IAS TJ,Tstg 11.
25 1.
5 -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2.
1 62.
5 3.
8 65 Units V V A A A W W/ C mJ A C Units C/W C/W Details are subject to change without notice .
1 Rev 5.
2011.
Feb http://www.
cet-mos.
com CEP02N6G/CEB02N6G CEF02N6G Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 600V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V 600 25 100 -100 V µA nA nA Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) VGS = VDS, ID = 250µA 2 4 RDS(on) VGS = 10V, ID = 1A 3.
8 5 V Ω Dynamic Characteristics c Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Ciss Coss VDS = 25V, VGS = 0V, f = 1.
0 MHz 290 70 pF pF Crss 15 pF ...


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