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CEB02N6

CET
Part Number CEB02N6
Manufacturer CET
Description N-Channel MOSFET
Published May 7, 2007
Detailed Description CEP02N6/CEB02N6 4 ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter DYNAMIC CHARACTERISTICS b Input...
Datasheet PDF File CEB02N6 PDF File

CEB02N6
CEB02N6

Overview
CEP02N6/CEB02N6 4 ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter DYNAMIC CHARACTERISTICS b Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Forward Voltage CISS COSS CRSS a Symbol Condition Min Typ Max Unit 250 50 30 1.
5 PF PF PF VDS =25V, VGS = 0V f =1.
0MHZ 4 VGS = 0V, Is =2A DRAIN-SOURCE DIODE CHARACTERISTICS VSD V Notes a.
Pulse Test:Pulse Widthś 300ijs, Duty Cycle ś 2%.
b.
Guaranteed by design, not subject to production testing.
c.
L=60mH, IAS=2.
0A, VDD=50V, RG=25Ω , Starting TJ=25 C 3.
0 VGS=10,9,8,7V 2.
5 ID, Drain Current(A) 2.
0 1.
5 1.
0 ID, Drain Current (A) 150 C 1 VGS=6V VGS=5V 0.
5 0 0 2 4 6 8 10 12 -55 C 25 C 1.
VDS=40V 2.
Pulse Test 0.
1 2 4 6 8 10 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 1.
Output Characteristics Figure 2.
Transfer Characteristics 4-4 CEP02N6/CEB02N6 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 600 500 2.
2 1.
9 1.
6 1.
3 1.
0 0.
7 0.
4 -100 -50 0 50 100 150 200 I...


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