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C5030

Toshiba Semiconductor
Part Number C5030
Manufacturer Toshiba Semiconductor
Description 2SC5030
Published May 9, 2014
Detailed Description 2SC5030 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5030 Strobe Flash Applications Medium Power Amplifier Applicat...
Datasheet PDF File C5030 PDF File

C5030
C5030

Overview
2SC5030 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5030 Strobe Flash Applications Medium Power Amplifier Applications Unit: mm • • • High DC current gain : hFE (1) = 800 to 3200 (VCE = 2 V, IC = 0.
5 A) : hFE (2) = 250 (min) (VCE = 2 V, IC = 4 A) Low saturation voltage: VCE (sat) = 0.
5 V (max) (IC = 4 A, IB = 40 mA) High collector power dissipation: PC = 1.
3 W Maximum Ratings (Ta = 25°C) Characteristics Sy Collector-base voltage Collector-emitter voltage Emitter-base voltage DC I Collector current Pulse (Note) Base current Collector power dissipation Junction temperature Storage temperature range mbol VCBO VCES VCEO 20 VEBO C Rating 50 40 Unit V V V 8 5 8 0.
5 3 150 −55 to 150 JEDEC A ― ― 8M1A ICP IB PC 1.
Tj Tstg JEITA TOSHIBA 2- A W °C °C Weight: 0.
55 g (typ.
) Note: Conditions: Pulse width = 10 ms (max), duty cycle = 30% (max) Electrical Characteristics (Ta = 25°C) Characteristics Sy Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance mbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE fT Cob Test Condition VCB = 50 V, IE = 0 VEB = 8 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 0.
5 A VCE = 2 V, IC = 4 A IC = 4 A, IB = 40 mA VCE = 2 V, IC = 4 A VCE = 2 V, IC = 0.
5 A VCB = 10 V, IE = 0, f = 1 MHz Min ― ― 20 800 250 ― ― ― 150 ― 45 Typ.
― 100 ― 100 ― ― 3200 ― ― 0.
― 1.
― 5 2 ― MH ― pF V V z ―V Max Unit nA nA 1 2004-07-26 http://www.
Datasheet4U.
com 2SC5030 Marking C5030 Part No.
(or abbreviation code) Lot No.
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
2 2004-07-26 2SC5030 IC – VCE 10 Common emitter 8 50 40 30 20 10 6 5 4 2 2 IB = 0.
5 mA 0 0 0 0 Ta = 25°C 8 Common emitter VCE = 2 V IC – VBE IC (A) IC (A) Collector current 6 Collector current 4 Ta = 125°C 2 25 −40 12 3 45 6 0.
2 0.
4 0.
6 0.
8 1.
0 1.
2 Collector-emitter voltage VCE (V) Base-emi...


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