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SPC6606

SYNC POWER
Part Number SPC6606
Manufacturer SYNC POWER
Description N & P Pair MOSFET
Published Feb 2, 2016
Detailed Description SPC6606 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC6606 is the N-Channel and P-Channel enhancement mode powe...
Datasheet PDF File SPC6606 PDF File

SPC6606
SPC6606

Overview
SPC6606 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC6606 is the N-Channel and P-Channel enhancement mode power field effect transistors w h i c h are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed.
FEATURES  N-Channel 12V/4.
0A,RDS(ON)=26mΩ@VGS=4.
5V 12V/3.
0A,RDS(ON)=35mΩ@VGS=2.
5V 12V/2.
0A,RDS(ON)=50mΩ@VGS=1.
8V  P-Channel -12V/-3.
3A,RDS(ON)=70mΩ@VGS=-4.
5V -12V/-2.
8A,RDS(ON)=85mΩ@VGS=-2.
5V -12V/-2.
3A,RDS(ON)=110mΩ@VGS=-1.
8V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and maximum DC current capability  TDFN2x2-6L package design APPLICATIONS • Power Management in Note ...


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