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IRF541

Harris
Part Number IRF541
Manufacturer Harris
Description N-Channel Power MOSFETs
Published May 26, 2014
Detailed Description Semiconductor IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM 25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm, N-Chan...
Datasheet PDF File IRF541 PDF File

IRF541
IRF541

Overview
Semiconductor IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM 25A and 28A, 80V and 100V, 0.
077 and 0.
100 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field eff ect tr ansistors.
The y are adv anced po wer MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdo wn avalanche mode of operation.
All of these po wer MOSFETs are designed f or applications such as s witching regulators, switching convertors, motor dr ivers, relay drivers, and dr ivers for high po wer bipolar s witching tr ansistors requir ing high speed and lo w gate drive power.
These types can be operated directly from integrated circuits.
Formerly developmental type TA17421.
November 1997 Features • 25A and 28A, 80V and 100V • rDS(ON) = 0.
077Ω and 0.
100Ω • Single Pulse Avalanche Energy Rated • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Solder...


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