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2SD2636

Part Number	2SD2636
Manufacturer	Toshiba
Description	Silicon NPN Triple Diffused Type Transistor
Published	Jun 3, 2014
Detailed Description	2SD2636 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2636 Power Amplifier Appli...
Datasheet	2SD2636 PDF File

Overview

2SD2636 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2636 Power Amplifier Applications High-Power Switching Applications • • High-breakdown voltage: VCEO = 160 V (min) Complementary to 2SB1682 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristic S Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse I ymbol VCBO VCEO VEBO IC CP 15 Rating 160 160 5 8 Unit V V V A 1.
Base A W °C °C 2.
Collector(heatsink) 3.
Emitter IB PC Tj Tstg 1 100 150 −55 to 150 JEDEC ― JEITA ― Note: Using continuously under heavy loads (e.
...

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