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SSF2N60

Silikron
Part Number SSF2N60
Manufacturer Silikron
Description N-Channel enhancement mode power field effect transistors
Published Jun 5, 2014
Detailed Description                                  SSF2N60  Main Product Characteristics: VDSS 600V RDS(on) ID 3.6ohm(typ.) 2A TO220   ...
Datasheet PDF File SSF2N60 PDF File

SSF2N60
SSF2N60

Overview
                                 SSF2N60  Main Product Characteristics: VDSS 600V RDS(on) ID 3.
6ohm(typ.
) 2A TO220    Marking and pin Assignm ent  Schematic dia gram  Features and Benefits: „ Advanced Process Technology „ Special designed for PWM, load switching dan gene ral pur pose applications „ Ultra low on-r esistance with low gate charg e „ Fastswitching and re verse b ody reco very „ 150 ℃ operati ng temperatur e       Description: These N-Ch annel en hancement mode power field ef fect transistors are produced usin g silikron proprietary MOSFET te chnology.
T his advance d technology has be en especially tailored t o minimize on-state resistance, provide superior switching performance, and withstand high ene rgy pulse in the avala nche and commutation mode.
T hese devices are well suited for high ef ficiency switch mode power supplies Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS Drain-S VGS EAS IAS TJ TSTG Parameter Max.
Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ 54 Linear Derating Factor ource Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=55mH Avalanche Current @ L=55mH Operating Junction and Storage Temperature Range 0.
43 600 ± 30 110 2 -55 to + 150 2 1.
3 8 W W/°C V V mJ A °C A Units ©Silikron Semiconductor CO.
,LTD.
2011.
08.
18 www.
silikron.
com  Version : 1.
0 pa ge 1 of 8 http://www.
Datasheet4U.
com                                  SSF2N60 Typ.
— — — Max.
2.
32 62 40 Units ℃/W ℃/W ℃/W Thermal Resistance Symbol RθJC RθJA Characterizes Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④ Junction-to-Ambient (PCB mounted, steady-state) ④ Electrical Characterizes @TA=25℃ unless otherwise specified Symbol Pa rameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr Rise td(off) tf Ciss Crss Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage Drain-to-Source leakage current Gate-t...


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