DatasheetsPDF.com

SSF2N60

GOOD-ARK
Part Number SSF2N60
Manufacturer GOOD-ARK
Description 600V N-Channel MOSFET
Published Jan 16, 2016
Detailed Description Main Product Characteristics VDSS 600V RDS(on) 3.6ohm(typ.) ID 2A Features and Benefits TO-220  Advanced Process...
Datasheet PDF File SSF2N60 PDF File

SSF2N60
SSF2N60

Overview
Main Product Characteristics VDSS 600V RDS(on) 3.
6ohm(typ.
) ID 2A Features and Benefits TO-220  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature  Lead free product SSF2N60 600V N-Channel MOSFET Marking and Pin Assignment Schematic Diagram Description These N-Channel enhancement mode power field effect transistors are produced using proprietary MOSFET technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supplies.
Absolute Max Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=55mH Avalanche Current @ L=55mH Operating Junction and Storage Temperature Range Max.
2 1.
3 8 54 0.
43 600 ± 30 110 2 -55 to + 150 Units A W W/°C V V mJ A °C www.
goodark.
com Page 1 of 7 Rev.
1.
0 SSF2N60 600V N-Channel MOSFET Thermal Resistance Symbol RθJC RθJA Characteristics Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④ Junction-to-Ambient (PCB mounted, steady-state) ④ Typ.
— — — Max.
2.
32 62 40 Units ℃/W ℃/W ℃/W Electrical Characteristics @TA=25℃ unless otherwise specified Symbol V(BR)DSS RDS(on) VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage Drain-to-Source leakage current Gate-to-Source forward leakage Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)