DatasheetsPDF.com

SSF2N60D2

GOOD-ARK
Part Number SSF2N60D2
Manufacturer GOOD-ARK
Description 600V N-Channel MOSFET
Published Jan 16, 2016
Detailed Description Main Product Characteristics VDSS RDS(on) ID 600V 3.7Ω (typ.) 2A TO-252 Features and Benefits  Advanced MOSFET proc...
Datasheet PDF File SSF2N60D2 PDF File

SSF2N60D2
SSF2N60D2

Overview
Main Product Characteristics VDSS RDS(on) ID 600V 3.
7Ω (typ.
) 2A TO-252 Features and Benefits  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature  Lead free product SSF2N60D2 600V N-Channel MOSFET Preliminary Marking and Pin Assignment Schematic Diagram Description It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=30mH Avalanche Current @ L=30mH Operating Junction and Storage Temperature Range Max.
2 1.
3 8 34 0.
27 600 ± 30 115 2.
52 -55 to +150 Units A W W/°C V V mJ A °C www.
goodark.
com Page 1 of 7 Rev.
1.
0 SSF2N60D2 600V N-Channel MOSFET Preliminary Thermal Resistance Symbol RθJC RθJA Characteristics Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④ Typ.
— — Max.
3.
7 110 Units ℃/W ℃/W Electrical Characteristics @TA=25℃ unless otherwise specified Symbol V(BR)DSS RDS(on) VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage Drain-to-Source leakage current Gate-to-Source forward leakage Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacita...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)