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ZTX749A

Fairchild Semiconductor
Part Number ZTX749A
Manufacturer Fairchild Semiconductor
Description PNP Transistor
Published Jun 7, 2014
Detailed Description ZTX749A ZTX749A PNP Low Saturation Transistor • This device are designed with high current gain and low saturation volt...
Datasheet PDF File ZTX749A PDF File

ZTX749A
ZTX749A


Overview
ZTX749A ZTX749A PNP Low Saturation Transistor • This device are designed with high current gain and low saturation voltage with collector currents up to 2A continuous.
Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current 8 c T Value -35 -45 -5 -2 - Continuous om -55 ~ +150 Min.
-35 45 5 -100 -10 -100 70 100 75 15 Max.
300 -300 -500 -1.
25 -1 100 100 Max.
1 125 Operating and Storage Junction Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Symbol Off Characteristics BVCEO BVCBO BVEBO ICBO IEBO hFE r e .
n a Parameter Electrical Characteristics TA=25°C unless otherwise noted Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain IC = -10mA ce.
Test Condition NOTES: 1.
These ratings are based on a maximum junction temperature of 150°C.
2.
These are steady state limits.
The factory should be consulted on applications involving pulsed or low duty cycle operations.
t e n ua IC = -100µAIE = -100µAVEB = -4V IC = -1A, VCE = -2V Parameter F w C VCB = -30V VCB = -30V, TA = 100°C On Characteristics* ww PD IC = -50mA, VCE = -2V IC = -1A, VCE = -2V IC = -2A, VCE = -2V IC = -6A, VCE = -2V IC = -1A, IB = -100mA IC = -2A, IB = -200mA IC = -1A, IB = -100mA VCE(sat) VBE(sat) VBE(on) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Output Capacitance Transition Frequency Small-Signal Characteristics Cobo fT VCB = -10V, IE = 0, f = 1MHz IC = -100mA, VCE = -5V f = 100MHz PF * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2% Thermal Characteristics TA=25°C unless otherwise noted Symbol PD RθJA Total Device Dissipation Thermal Resistance, Junction to Ambient Units W °C/W ©2003 Fairchild Semiconductor Corp...


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