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ZTX749

Fairchild Semiconductor
Part Number ZTX749
Manufacturer Fairchild Semiconductor
Description PNP Low Saturation Transistor
Published May 7, 2007
Detailed Description ZTX749 ZTX749 PNP Low Saturation Transistor • This device are designed with high current gain and low saturation voltag...
Datasheet PDF File ZTX749 PDF File

ZTX749
ZTX749

Overview
ZTX749 ZTX749 PNP Low Saturation Transistor • This device are designed with high current gain and low saturation voltage with collector currents up to 2A continuous.
C BE TO-226 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value -25 -35 -5 -2 -55 ~ +150 Units V V V A °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1.
These ratings are based on a maximum junction temperature of 150°C.
2.
These are steady state limits.
The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics TA=25°C unless otherwise noted Symbol Off Characteristics BVCEO BVCBO BVEBO ICBO IEBO hFE Parameter Test Condition IC = -10mA IC = -100µA IE = -100µA VCB = -30V VCB = -30V, TA = 100°C VEB = -4V IC = -50mA, VCE = -2V IC = -1A, VCE = -2V IC = -2A, VCE = -2V IC = -6A, VCE = -2V IC = -1A, IB = -100mA IC = -2A, IB = -200mA IC = -1A, IB = -100mA IC = -1A, VCE = -2V VCB = -10V, IE = 0, f = 1MHz IC = 1-00mA, VCE = -5V f = 100MHz 100 70 100 75 15 Min.
-25 -35 -5 -100 -10 -100 Max.
Units V V V nA µA nA Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain On Characteristics* 300 VCE(sat) VBE(sat) VBE(on) Cobo fT Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Output Capacitance Transition Frequency -300 -500 -1.
25 -1 100 mV V V PF Small-Signal Characteristics * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2% Thermal Characteristics TA=25°C unless otherwise noted Symbol PD RθJA Parameter Total Device Dissipation Thermal Resistance, Junction to Ambient Max.
1 125 Units W °C/W ©2003 Fairchild Semiconductor...


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