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ZTX749

Zetex Semiconductors
Part Number ZTX749
Manufacturer Zetex Semiconductors
Description PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
Published Apr 17, 2005
Detailed Description PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 – APRIL 94 FEATURES * 25 Volt VCEO * 2 Amp continuous current * Low s...
Datasheet PDF File ZTX749 PDF File

ZTX749
ZTX749

Overview
PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 – APRIL 94 FEATURES * 25 Volt VCEO * 2 Amp continuous current * Low saturation voltage ZTX749 C B E ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C derate above 25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg E-Line TO92 Compatible VALUE -35 -25 -5 -6 -2 1 5.
7 -55 to +200 UNIT V V V A A W mW/ °C °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN.
-35 -25 -5 -0.
1 -10 -0.
1 -0.
12 -0.
23 -0.
9 -0.
8 70 100 75 15 200 200 150 50 -0.
3 -0.
5 -1.
25 -1 TYP.
MAX.
UNIT V V V µA µA µA CONDITIONS.
IC=-100µ A, IE=0 IC=-10mA, IB=0* IE=-100µ A, IC=0 VCB=-30V VCB=-30V,T amb =100°C VEB=-4V, IE=0 IC=1A, IB=-100mA* IC=2A, IB=-200mA* IC=1A, IB=-100mA* IC=-1A, VCE=-2V* IC=-50mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-6A, VCE=-2V* Emitter Cut-Off Current IEBO Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage VCE(sat) VBE(sat) VBE(on) V V V V Static Forward Current hFE Transfer Ratio 300 *Measured under pulsed conditions.
Pulse width=300µs.
Duty cycle ≤2% 3-254 ZTX749 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Transition Frequency Output Cpacitance Switching Times SYMBOL fT Cobo ton toff MIN.
100 TYP.
160 55 40 450 100 MAX.
UNIT MHz pF ns ns CONDITIONS.
IC=-100mA, VCE=-5V f=100MHz VCB=-10V f=1MHz IC=-500mA, VCC=-10V IB1=IB2=-50mA *Measured under pulsed conditions.
Pulse width=300µs.
Duty cycle ≤ 2% THERMAL CHARACTERISTICS PARAMETER Thermal Resistance:Junction to Ambient1 Junction to Ambient2 Junction to Case SYMBOL Rth(j-amb)1 Rth(j-amb)2 † Rth(j-case) MAX.
175 116 70 UN...


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