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H30R90

Infineon
Part Number H30R90
Manufacturer Infineon
Description IHW30N90R
Published Jun 9, 2014
Detailed Description Soft Switching Series IHW30N90R q Reverse Conducting IGBT with monolithic body diode Features: • 1.5V typical saturati...
Datasheet PDF File H30R90 PDF File

H30R90
H30R90

Overview
Soft Switching Series IHW30N90R q Reverse Conducting IGBT with monolithic body diode Features: • 1.
5V typical saturation voltage of IGBT • Trench and Fieldstop technology for 900 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in VCE(sat) • Low EMI • Qualified according to JEDEC1 for target applications • Application specific optimisation of inverse diode • Pb-free lead plating; RoHS compliant Applications: • Microwave Oven • Soft Switching Applications for ZCS Type IHW30N90R 900V Maximum Ratings Parameter Sy Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 900V, Tj ≤ 175°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms) Power dissipation, TC = 25°C Operating junction temperature Storage temperature Soldering temperature, 1.
6mm (0.
063 in.
) from case for 10s P tot 454 T j -40.
.
.
+ Tstg 175 -55.
.
.
+175 260 IFpuls VGE ICpuls IF 60 30 90 ±20 ±25 W °C °C V IC 60 30 90 90 mbol VCE Value 900 Unit V A VCE I C C G E PG-TO-247-3 VCE(sat),Tj=25°C 1.
5V Tj,max 175°C Marking Packag H30R90 PG-TO e -247-3 30A 1 J-STD-020 and JESD-022 1 Rev.
2.
2 Nov 08 http://www.
Datasheet4U.
com Power Semiconductors Soft Switching Series IHW30N90R q Max.
Value 0.
33 0.
33 40 Unit K/W Thermal Resistance Parameter Sy Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Sy Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0 V , I C =0.
5mA VCE(sat) V G E = 15 V, I C =30A T j = 25 ° C T j = 150 ° C T j = 175 ° C Diode forward voltage...


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