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TSM4435B

Taiwan Semiconductor
Part Number TSM4435B
Manufacturer Taiwan Semiconductor
Description 30V P-Channel MOSFET
Published Aug 5, 2014
Detailed Description TSM4435B 30V P-Channel MOSFET SOP-8 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. ...
Datasheet PDF File TSM4435B PDF File

TSM4435B
TSM4435B

Overview
TSM4435B 30V P-Channel MOSFET SOP-8 Pin Definition: 1.
Source 8.
Drain 2.
Source 7.
Drain 3.
Source 6.
Drain 4.
Gate 5.
Drain PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) -30 21 @ VGS = -10V 35 @ VGS = -4.
5V ID (A) -9.
1 -6.
9 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● DC-DC Conversion Battery Switch Ordering Information Part No.
TSM4435BCS RL Package SOP-8 Packing 2.
5Kpcs / 13” Reel P-Channel MOSFET TSM4435BCS RLG SOP-8 2.
5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product Absolute Maximum Rating (TA = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range a,b o o Symbol VDS VGS ID IDM IS PD TJ TJ, TSTG Ta = 25 C Ta = 75 C Limit -30 ±20 -9.
1 -50 -2.
1 2.
5 1.
6 +150 - 55 to +150 Unit V V A A A W o o C C Thermal Performance Parameter Junction to Foot (Drain) Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a.
Pulse width limited by the Maximum junction temperature b.
Surface Mounted on FR4 Board, t ≤ 10 sec.
Symbol RӨJF RӨJA Limit 22 50 Unit o o C/W C/W 1/6 Version: A11 TSM4435B 30V P-Channel MOSFET Electrical Specifications (TA = 25oC unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a Conditions VGS = 0V, ID = -250uA VDS = VGS, ID = -250µA VGS = ±20V, VDS = 0V VDS = -30V, VGS = 0V VDS = -5V, VGS = -10V a Symbol BVDSS VGS(TH) IGSS IDSS ID(ON) RDS(ON) gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) Min -30 -1 ---40 --------------- Typ -----17 25 24 -0.
8 33 5.
8 8.
6 1573 319 211 10 15 110 70 Max --3 ±100 -1.
0 -21 35 --1.
2 70 --1900 -295 15 25 170 110 Unit V V nA µA A mΩ S V Drain-Source On-Stat...


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