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SSG4401P

SeCoS Halbleitertechnologie
Part Number SSG4401P
Manufacturer SeCoS Halbleitertechnologie
Description N-Channel MOSFET
Published Aug 10, 2014
Detailed Description SSG4401P Elektronische Bauelemente -3.6 A, -150 V, RDS(ON) 160 mΩ P-Ch Enhancement Mode Power MOSFET RoHS Compliant Pro...
Datasheet PDF File SSG4401P PDF File

SSG4401P
SSG4401P


Overview
SSG4401P Elektronische Bauelemente -3.
6 A, -150 V, RDS(ON) 160 mΩ P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.
SOP-8 B L D M FEATURES Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe SOP-8 saves board space.
Fast switching speed.
High performance trench technology.
A C N J H G K F E APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
REF.
A B C D E F G Millimeter Min.
Max.
5.
80 6.
20 4.
80 5.
00 3.
80 4.
00 0° 8° 0.
40 0.
90 0.
19 0.
25 1.
27 TYP.
REF.
H J K L M N Millimeter Min.
Max.
0.
35 0.
49 0.
375 REF.
45° 1.
35 1.
75 0.
10 0.
25 0.
25 REF.
PACKAGE INFORMATION Package SOP-8 MPQ 2.
5K Leader Size 13’ inch S S S G D D D D MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 2 1 1 Symbol VDS VGS TA = 25° C TA = 70° C ID IDM IS PD TJ, TSTG Ratings -150 ±20 -3.
6 -3.
1 -15 -4.
1 3.
1 2.
2 -55 ~ 150 Unit V V A A A A W W ° C Continuous Source Current (Diode Conduction) Total Power Dissipation 1 TA = 25° C TA = 70° C Operating Junction & Storage Temperature Range Thermal Resistance Ratings Thermal Resistance Junction-Ambient (Max.
) 1 t ≦ 10 sec Steady State RθJA 40 80 ° C/W Notes: 1.
Surface Mounted on 1” x 1” FR4 Board.
2.
Pulse width limited by maximum junction temperature.
http://www.
SeCoSGmbH.
com/ Any changes of specification will not be informed individually.
10-Sep-2013 Rev.
A Page 1 of 4 SSG4401P Elektronische Bauelemente -3.
6 A, -150 V, RDS(ON) 160 mΩ P-Ch Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parame...


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