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SSG4403

SeCoS Halbleitertechnologie GmbH
Part Number SSG4403
Manufacturer SeCoS Halbleitertechnologie GmbH
Description Enhancement Mode Power MOSFET
Published Dec 28, 2009
Detailed Description SSG4403 Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -6.1 A, -30 V, RDS(ON) 50 mΩ RoHS Compliant Produc...
Datasheet PDF File SSG4403 PDF File

SSG4403
SSG4403

Overview
SSG4403 Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -6.
1 A, -30 V, RDS(ON) 50 mΩ RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSG4403 uses advanced trench technology to provide excellent on-resistance, low gate charge and operation with gate voltages as low as 2.
5V.
The device is suitable for use as a load switch or in PWM applications.
FEATURES z z z Low Gate Charge Lower On-resistance Fast Switching Characteristic PACKAGE DIMENSIONS SOP-8 0.
40 0.
90 6.
20 5.
80 0.
25 0.
19 0.
25 45 o 0.
375 REF 3.
80 4.
00 0.
35 0.
49 1.
27Typ.
4.
80 5.
00 0.
100.
25 0 o 8 o 1.
35 1.
75 www.
DataSheet4U.
com Dimensions in millimeters ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @Ta=25℃ ID @Ta=70℃ IDM PD @Ta=25℃ Tj, Tstg Ratings -30 ±12 -6.
1 -5.
1 -60 2.
5 -55 ~ +150 0.
02 Unit V V A A A W ℃ W/℃ Total Power Dissipation Operating Junction and Storage Temperature Range Linear Derating Factor THERMAL DATA Parameter Thermal Resistance Junction-ambient 3 Symbol Max.
Rθj-amb Value 50 Unit ℃/W 01-June-2005 Rev.
A Page 1 of 4 SSG4403 Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -6.
1 A, -30 V, RDS(ON) 50 mΩ P-CHANNEL ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25℃) Drain-Source Leakage Current(Tj=55℃) Symbol BVDSS VGS(th) gfs IGSS IDSS Min.
-30 -0.
7 - Typ.
11 9.
4 2 3 7.
6 8.
6 44.
7 16.
5 940 104 73 Max.
-1.
3 ±100 -1 -5 50 61 117 - Unit V V S nA uA uA Test Conditions VGS=0, ID=-250uA VDS=VGS, ID=-250uA VDS=-5V, ID=-5A VGS= ±12V VDS=-30V, VGS=0 VDS=-24V, VGS=0 VGS=-10V, ID=-6.
1A Static Drain-Source On-Resistance2 RDS(ON) - mΩ VGS=-4.
5V, ID=-5A VGS=-2.
5 V, ID=-1 A ID=-5 A VDS=-15 V VGS=-4.
5 V Total Gate Charge2...


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