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SSG4407

SeCoS Halbleitertechnologie GmbH
Part Number SSG4407
Manufacturer SeCoS Halbleitertechnologie GmbH
Description Enhancement Mode Power MOSFET
Published Dec 28, 2009
Detailed Description SSG4407 -10.7A, -30V,RDS(ON) 14m£[ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Pr...
Datasheet PDF File SSG4407 PDF File

SSG4407
SSG4407

Overview
SSG4407 -10.
7A, -30V,RDS(ON) 14m£[ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.
FET RoHS Compliant Product Description The SSG4407 provide the designer with the best Combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SOP-8 is universally preferred for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters.
0.
35 0.
49 SOP-8 0.
40 0.
90 6.
20 5.
80 0.
25 0.
19 0.
25 45 o 0.
375 REF 3.
80 4.
00 1.
27 Typ.
4.
80 5.
00 0.
10 0.
25 Features * Lower On-Resistance * Simple Drive Requirement * Fast Switching Characteristic D 8 D 7 D 6 D 5 0 o 8 o 1.
35 1.
75 Dimensions in millimeters D Date Code 4407SC G 1 S 2 S 3 S 4 G S Absolute Maximum Ratings Parameter www.
DataSheet4U.
com Drain-Source Voltage Symbol VDS VGS Ratings -30 ±25 -10.
7 -8.
6 -50 Unit V V A A A W W / oC o Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 ID@TA=25 oC ID@TA=70 C IDM PD@TA=25 C o o Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range 2.
5 0.
02 Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max.
Rthj-a Ratings 50 Unit o C/W http://www.
SeCoSGmbH.
com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev.
A Page 1 of 4 SSG4407 Elektronische Bauelemente o -10.
7A, -30V,RDS(ON) 14m£[ P-Channel Enhancement Mode Power Mos.
FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C ) Drain-Source Leakage Current(Tj= 70 C ) Static Drain-Source On-Resistance 2 o o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min.
- 30 _ Typ.
_ - 0.
015 _ _ _ _ _ _ Max.
_ Unit V V/ C V nA uA uA o Test Condition VGS=0V, ID=-250uA Reference to 25 C, ID=-...


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