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2N7002BK

NXP Semiconductors
Part Number 2N7002BK
Manufacturer NXP Semiconductors
Description N-channel MOSFET
Published Aug 19, 2014
Detailed Description 2N7002BK 60 V, 350 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General d...
Datasheet PDF File 2N7002BK PDF File

2N7002BK
2N7002BK

Overview
2N7002BK 60 V, 350 mA N-channel Trench MOSFET Rev.
1 — 17 June 2010 Product data sheet 1.
Product profile 1.
1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.
2 Features and benefits „ „ „ „ „ Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 2 kV AEC-Q101 qualified 1.
3 Applications „ „ „ „ Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.
4 Quick reference data Table 1.
Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance Conditions Tamb = 25 °C Tamb = 25 °C Tamb = 25 °C; VGS = 10 V Tj = 25 °C; VGS = 10 V; ID = 500 mA [1] Min - Typ 1 Max 60 ±20 350 1.
6 Unit V V mA Ω [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
NXP Semiconductors 2N7002BK 60 V, 350 mA N-channel Trench MOSFET 2.
Pinning information Table 2.
Pin 1 2 3 Pinning Symbol G S D Description gate source drain 1 2 G Simplified outline 3 Graphic symbol D S 017aaa000 3.
Ordering information Table 3.
Ordering information Package Name 2N7002BK Description Version SOT23 TO-236AB plastic surface-mounted package; 3 leads Type number 4.
Marking Table 4.
2N7002BK [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China Marking codes Marking code[1] LN* Type number 5.
Limiting values Table 5.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol VDS VGS ID Parameter drain-source voltage gate-source voltage drain current Conditions Tamb = 25 °C Tamb = 25 °C VGS = 10 V Tamb = 25 °C Tamb = 100 °C IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 μs [1] Min - Max 60 ±20 350 245 1.
2 Unit V V mA mA A 2N7002BK All information provided in this document is subject to legal disclaim...


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