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ME20N03

Matsuki
Part Number ME20N03
Manufacturer Matsuki
Description N-Channel Enhancement MOSFET
Published Aug 22, 2014
Detailed Description ME20N03 N-Channel Enhancement MOSFET GENERAL DESCRIPTION The ME20N03 is the N-Channel logic enhancement mode power field...
Datasheet PDF File ME20N03 PDF File

ME20N03
ME20N03

Overview
ME20N03 N-Channel Enhancement MOSFET GENERAL DESCRIPTION The ME20N03 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
FEATURES ● RDS(ON) ≦15mΩ@VGS=10V ● RDS(ON) ≦20mΩ @VGS=4.
5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Desktop Computer ● Video Graphic Accelerate Card ● Battery Powered System ● DC/DC Converter PIN CONFIGURATION (TO-252) Top View Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-...


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