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AP18P10GH

Advanced Power Electronics
Part Number AP18P10GH
Manufacturer Advanced Power Electronics
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 14, 2014
Detailed Description AP18P10GH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fa...
Datasheet PDF File AP18P10GH PDF File

AP18P10GH
AP18P10GH

Overview
AP18P10GH/J RoHS-compliant Product Advanced Power Electronics Corp.
▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G P-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID -100V 180mΩ -12A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
The through-hole version (AP18P10GJ) is available for low-profile applications.
G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating -100 ±20 -12 -10 -48 35.
7 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 3.
5 110 Units ℃/W ℃/W Data and specifications subject to change without notice 1 200810162 AP18P10GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=-1mA VGS=-10V, ID=-8A VGS=-4.
5V, ID=-6A Min.
-100 -1 - Typ.
8 16 4.
4 8.
7 9 14 45 40 110 70 8 Max.
Units 180 210 -3 -10 -25 ±100 25.
6 12 V mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o VDS=VGS, ID=-250uA VDS= -10V, ID= -8A VDS=-80V, VGS=0V VGS= ±20V ID=-8A VDS=-80V VGS=-4.
5V VDS=-50V ID=-8A RG=3.
3Ω,VGS=-10V RD=6.
25Ω VGS=...


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