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2SD2256

Part Number	2SD2256
Manufacturer	Hitachi
Description	Silicon NPN Transistor
Published	Sep 23, 2014
Detailed Description	2SD2256 Silicon NPN Triple Diffused ADE-208-928 (Z) 1st. Edition Sep. 2000 Application Low frequency power amplifier co...
Datasheet	2SD2256 PDF File

Overview

2SD2256 Silicon NPN Triple Diffused ADE-208-928 (Z) 1st.
Edition Sep.
2000 Application Low frequency power amplifier complementary pair with 2SB1494 Features • High breakdown voltage and high current (VCEO = 120 V, I C = 25 A) • Built-in C-E diode Outline TO-3P 2 1 1.
Base 2.
Collector (Flange) 3.
Emitter ID 1 2 3 3 2SD2256 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1.
Value at TC = 25°C.
Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg ID* 1 1 Ratings 120 120 7 25 35 120 150 –55 to +150 25 Unit V V V A A W °C °C A Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 120 120 120 7 — — 2000 500 — — — — — — — — Typ — — — — — — — Max — — — — 10 10 20000 — 2.
0 3.
5 3.
0 4.
5 V V V V Unit V V V V µA µA Test condition...

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