DatasheetsPDF.com

2SD2256

Part Number	2SD2256
Manufacturer	INCHANGE
Description	Silicon NPN Darlington Power Transistor
Published	Sep 23, 2014
Detailed Description	INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2256 DESCRIPTION ·Hi...
Datasheet	2SD2256 PDF File

Overview

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2256 DESCRIPTION ·High DC Current Gain : hFE= 2000(Min.
)@ IC= 12A, VCE= 4V ·High Collector-Emitter Breakdown Voltage: V(BR)CEO = 120V(Min) APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 25 A ICM Collector Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature 35 A PC 120 W Tj 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Websit...

Similar Datasheet

2SD220 NPN Transistor - Sanken
2SD2200 PNP/NPN Epitaxial Planar Silicon Transistors - Sanyo Semicon Device
2SD2201 PNP/NPN Epitaxial Planar Silicon Transistors - Sanyo Semicon Device
2SD2202 PNP/NPN Epitaxial Planar Silicon Transistors - Sanyo Semicon Device
2SD2203 PNP/NPN Epitaxial Planar Silicon Transistors - Sanyo Semicon Device
2SD2204 NPN Transistor - Toshiba Semiconductor
2SD2206 Silicon NPN Transistor - Toshiba Semiconductor
2SD2209 Silicon NPN Transistor - Panasonic
2SD221 NPN Transistor - Sanken
2SD2210 Silicon NPN epitaxial planer type Transistor - Panasonic Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)