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2SD2693

Panasonic Semiconductor
Part Number 2SD2693
Manufacturer Panasonic Semiconductor
Description Power Transistors
Published Sep 24, 2014
Detailed Description This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SD2693, 2SD2693A Silicon NPN triple ...
Datasheet PDF File 2SD2693 PDF File

2SD2693
2SD2693

Overview
This product complies with the RoHS Directive (EU 2002/95/EC).
Power Transistors 2SD2693, 2SD2693A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1724, 2SB1724A ■ Features • Wide safe oeration area • Satisfactory linearity of forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat) • Full-pack package which can be installed to the heat sink with one screw.
15.
0±0.
5 Unit: mm 9.
9±0.
3 3.
0±0.
5 4.
6±0.
2 2.
9±0.
2 φ 3.
2±0.
1 13.
7±0.
2 4.
2±0.
2 Solder Dip ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) (Base open) Collector current Peak collector current * 1.
4±0.
2 1.
6±0.
2 0.
8±0.
1 2.
6±0.
1 Symbol 2SD2693 2SD2693A VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C 2SD2693A VCBO Rating 60 80 60 80 6 3 5 25 2.
0 150 −55 to +150 Unit V V 0.
55±0.
15 Collector-emitter voltage 2SD2693 Emitter-base voltage (Collector open) 2.
54±0.
30 5.
08±0.
50 1 2 3 V A A W °C °C 1: Base 2: Collector 3: Emitter TO-220D-A1 Package Collector power dissipation Junction temperature Storage temperature Internal Connection C B E Note) *: Non-repetitive peak collector current ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) *1 Symbol 2SD2693 2SD2693A 2SD2693A 2SD2693 2SD2693A 2SD2693 ICES IEBO hFE1 *2 Conditions IC = 30 mA, IB = 0 Min 60 80 Typ Max Unit V VCEO Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Collector-emitter cutoff current (E-B short) ICBO ICEO VCB = 80 V, IE = 0 VCE = 60 V, IB = 0 VCE = 80 V, IB = 0 VCE = 60 V, IB = 0 VEB = 6 V, IC = 0 VCE = 4 V, IC = 1 A VCE = 4 V, IC = 3 A IC = 3 A, IB = 0.
375 A VCE = 10 V, IC = 0.
5 A, f = 10 MHz IC = 1 A, Resistance loaded IB1 = 0.
1 A, IB2 = − 0.
1 A VCC = 50 V 30 0.
1 2.
3 0.
3 70 10 100 100 mA µA 100 1 250 0.
8 µA mA  V MHz µs µs µs Emitter-base cutoff current (Collector open) Forward current transfer ratio *1 hFE2 Collector-emitter saturation voltage ...


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