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AP9916GH

Advanced Power Electronics
Part Number AP9916GH
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 27, 2014
Detailed Description AP9916GH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low on-resistance ▼ Capable of 2.5V gate drive ▼ ...
Datasheet PDF File AP9916GH PDF File

AP9916GH
AP9916GH

Overview
AP9916GH/J Pb Free Plating Product Advanced Power Electronics Corp.
▼ Low on-resistance ▼ Capable of 2.
5V gate drive ▼ Low drive current ▼ Surface mount package S G D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 18V 25mΩ 35A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
G D S TO-252 G D S TO-251 Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=125℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.
5V Continuous Drain Current, VGS @ 4.
5V Pulsed Drain Current 1 Rating 18 ±8 35 16 90 50 0.
4 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient M...


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