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AP9916H

Advanced Power Electronics
Part Number AP9916H
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published May 2, 2008
Detailed Description AP9916H/J Advanced Power Electronics Corp. ▼ Low on-resistance ▼ Capable of 2.5V gate drive ▼ Low drive current www.Dat...
Datasheet PDF File AP9916H PDF File

AP9916H
AP9916H

Overview
AP9916H/J Advanced Power Electronics Corp.
▼ Low on-resistance ▼ Capable of 2.
5V gate drive ▼ Low drive current www.
DataSheet4U.
com ▼ Single N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 18V 25mΩ 35A G S Drive Requirement Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=125℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.
5V Continuous Drain Current, VGS @ 4.
5V Pulsed Drain Current 1 Rating 18 ± 12 35 16 90 50 0.
4 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
Max.
Value 2.
5 110 Unit ℃/W ℃/W Data and specifications subject to change without notice 200227032 AP9916H/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min.
18 0.
5 - Typ.
0.
03 18 17.
5 1.
2 7.
9 7.
3 98 25.
6 98 527 258 112 Max.
Units 25 40 1 1 25 ±100 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=4.
5V, ID=6A VGS=2.
5V, ID=5.
2A www.
DataSheet4U.
com VGS(th) Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=125 C) o o VDS=VGS, ID=250uA VDS=10V, ID=6A VDS=18V, VGS=0V VDS=18V ,VGS=0V VGS= ± 12V ID=18A VDS=18V VGS=5V VDS=10V ID=18A RG=3.
3Ω,VGS=5V RD=0.
56Ω VGS=0V VDS=18V f=1.
0MHz gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-Source Leakage Total...


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