DatasheetsPDF.com

AP9916GJ

Advanced Power Electronics
Part Number AP9916GJ
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 27, 2014
Detailed Description AP9916GH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low on-resistance ▼ Capable of 2.5V gate drive ▼ ...
Datasheet PDF File AP9916GJ PDF File

AP9916GJ
AP9916GJ

Overview
AP9916GH/J Pb Free Plating Product Advanced Power Electronics Corp.
▼ Low on-resistance ▼ Capable of 2.
5V gate drive ▼ Low drive current ▼ Surface mount package S G D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 18V 25mΩ 35A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
G D S TO-252 G D S TO-251 Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=125℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.
5V Continuous Drain Current, VGS @ 4.
5V Pulsed Drain Current 1 Rating 18 ±8 35 16 90 50 0.
4 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
Max.
Value 2.
5 110 Unit ℃/W ℃/W Data and specifications subject to change without notice 200723011 AP9916GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min.
18 0.
5 - Typ.
0.
03 18 17.
5 1.
2 7.
9 7.
3 98 25.
6 98 527 258 112 Max.
Units 25 40 1 25 250 ±100 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=4.
5V, ID=6A VGS=2.
5V, ID=5.
2A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=125 C) o o VDS=VGS, ID=250uA VDS=10V, ID=6A VDS=18V, VGS=0V VDS=18V ,VGS=0V VGS= ± 8V ID=18A VDS=18V VGS=5V VDS=10V ID=18A RG=3.
3Ω,VGS=5V RD=0.
56Ω VGS=0V VDS=18V f=1.
0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)