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2SD689

Part Number	2SD689
Manufacturer	INCHANGE
Description	Silicon NPN Darlington Power Transistor
Published	Sep 28, 2014
Detailed Description	isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 1A ·Collector-Emi...
Datasheet	2SD689 PDF File

Overview

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 1A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.
5V(Max)@ IC= 1A ·Complement to Type 2SB679 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low frequency medium power amplifier and medium speed switching applications.
·Pulse motor driver, relay drive and hammer drive applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 10 V IC Colle...

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