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IPP80N06S2-09

Infineon Technologies
Part Number IPP80N06S2-09
Manufacturer Infineon Technologies
Description Power-Transistor
Published Dec 2, 2014
Detailed Description OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C pea...
Datasheet PDF File IPP80N06S2-09 PDF File

IPP80N06S2-09
IPP80N06S2-09

Overview
OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested IPB80N06S2-09 IPP80N06S2-09 Product Summary V DS R DS(on),max (SMD version) ID 55 V 8.
8 mΩ 80 A PG-TO263-3-2 PG-TO220-3-1 Type IPB80N06S2-09 IPP80N06S2-09 Package PG-TO263-3-2 PG-TO220-3-1 Ordering Code Marking SP0002-18741 2N0609 SP0002-18740 2N0609 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse2) E AS I D= 80 A Gate source voltage4) V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value 80 80 320 370 ±20 190 -55 .
.
.
+175 55/175/56 Unit A mJ V W °C Rev.
1.
0 page 1 2006-03-13 Parameter Symbol Conditions Thermal characteristics2) Thermal resistance, junction - case R thJC Thermal resistance, junction ambient, leaded R thJA SMD version, device on PCB R thJA minimal footprint 6 cm2 cooling area5) IPB80N06S2-09 IPP80N06S2-09 min.
Values typ.
Unit max.
- - 0.
8 K/W - - 62 - - 62 - - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) V DS=V GS, I D=125 µA I DSS V DS=55 V, V GS=0 V, T j=25 °C I GSS RDS(on) V DS=55 V, V GS=0 V, T j=125 °C2) V GS=20 V, V DS=0 V V GS=10 V, I D=50 A, V GS=10 V, I D=50 A, SMD version 55 2.
1 - - 3.
0 0.
01 1 1 7.
6 7.
3 -V 4.
0 1 µA 100 100 nA 9.
1 mΩ 8.
8 Rev.
1.
0 page 2 2006-03-13 Parameter Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-...


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