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IPP80N06S2-H5

Infineon Technologies
Part Number IPP80N06S2-H5
Manufacturer Infineon Technologies
Description Power-Transistor
Published May 20, 2015
Detailed Description OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C pea...
Datasheet PDF File IPP80N06S2-H5 PDF File

IPP80N06S2-H5
IPP80N06S2-H5

Overview
OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested IPB80N06S2-H5 IPP80N06S2-H5 Product Summary V DS R DS(on),max (SMD version) ID 55 V 5.
2 mΩ 80 A PG-TO263-3-2 PG-TO220-3-1 Type IPB80N06S2-H5 IPP80N06S2-H5 Package Ordering Code Marking PG-TO263-3-2 SP0002-18162 2N06H5 PG-TO220-3-1 SP0002-18155 2N06H5 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse2) E AS I D= 80 A Gate source voltage4) V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value 80 80 320 700 ±20 300 -55 .
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+175 55/175/56 Unit A mJ V W °C Rev.
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0 page 1 2006-03-...


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