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IPP80N06S2-05

Infineon Technologies
Part Number IPP80N06S2-05
Manufacturer Infineon Technologies
Description Power-Transistor
Published May 20, 2015
Detailed Description OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C pea...
Datasheet PDF File IPP80N06S2-05 PDF File

IPP80N06S2-05
IPP80N06S2-05

Overview
OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested IPB80N06S2-05 IPP80N06S2-05 Product Summary V DS R DS(on),max (SMD version) ID 55 V 4.
8 mΩ 80 A PG-TO263-3-2 PG-TO220-3-1 Type IPB80N06S2-05 IPP80N06S2-05 Package Ordering Code Marking PG-TO263-3-2 SP0002-18877 2N0605 PG-TO220-3-1 SP0002-18873 2N0605 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse2) Gate source voltage4) E AS V GS I D= 80 A Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value 80 80 320 810 ±20 300 -55 .
.
.
+175 55/175/56 Unit A mJ V W °C Rev.
1.
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Values typ.
Unit max.
- - 0.
5 K/W - - 62 - - 62 - - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 55 - -V Gate threshold voltage V GS(th) V DS=V GS, I D=250 µA 2.
1 3.
0 4.
0 Zero gate voltage drain current Gate-source leakage current I DSS V DS=55 V, V GS=0 V, T j=25 °C - 0.
01 1 µA I GSS V DS=55 V, V GS=0 V, T j=125 °C2) V GS=20 V, V DS=0 V - 1 100 1 100 nA Drain-source on-state resistance RDS(on) V GS=10 V, I D=80 A - 4.
1 5.
1 mΩ V GS=10 V, I D=80 A, SMD version - 3.
8 4.
8 Rev.
1.
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