DatasheetsPDF.com

2SD1890

Panasonic Semiconductor
Part Number 2SD1890
Manufacturer Panasonic Semiconductor
Description Silicon NPN Transistor
Published Apr 6, 2015
Detailed Description Power Transistors 2SD1890 Silicon NPN triple diffusion planar type Darlington Plehtatsp:e/M/vaiiwsniwttefw.nolsalenocmw...
Datasheet PDF File 2SD1890 PDF File

2SD1890
2SD1890

Overview
Power Transistors 2SD1890 Silicon NPN triple diffusion planar type Darlington Plehtatsp:e/M/vaiiwsniwttefw.
nolsalenocmwiie/cnpolDgdiina.
ssUncpceRoaodLnnnttiapidalinmsnbasuaouiocneneniuoetdtdcnd.
ieltticnnaytnmocalp.
eujaniuesepctn/ddtieeetentsnfyn/yfopaproelnelmdcoaetwitioynnpg.
efourDisMcaionnttie Productnnu 14.
0±0.
5aendc Solder Dip 4.
0 lifecycle stage.
For power amplification Complementary to 2SB1250 s Features q Optimum for 25W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat): <2.
5V q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature VCBO VCEO VEBO ICP IC PC Tj Tstg 100 80 5 6 3 35 2 150 –55 to +150 Unit V V V A A W ˚C ˚C 16.
7±0.
3e/ 7.
5±0.
2 0.
7±0.
1 10.
0±0.
2 5.
5±0.
2 Unit: mm 4.
2±0.
2 2.
7±0.
2 4.
2±0.
2 φ3.
1±0.
1 1.
3±0.
2 1.
4±0.
1 0.
8±0.
1 0.
5 +0.
2 –0.
1 2.
54±0.
25 5.
08±0.
5 123 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) Internal Connection C B E s Electrical Characteristics (TC=25˚C) Parameter Symbol Conditions Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time ICBO ICEO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf VCB = 100V, IE = 0 VCE = 80V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 2A IC = 2A, IB = 2mA IC = 2A, IB = 2mA VCE = 10V, IC = 0.
5A, f = 1MHz IC = 2A, IB1 = 2mA, IB2 = –2mA, VCC = 50V *hFE2 Rank classification Rank Q P hFE2 5000 to 15000 8000 to 30000 min 80 2000 5000 typ max Unit 100 µA 100 µA 100 µA V 30000 2.
5 V ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)