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NCE2011E

NCE Power Semiconductor
Part Number NCE2011E
Manufacturer NCE Power Semiconductor
Description NCE N-Channel Enhancement Mode Power MOSFET
Published May 22, 2015
Detailed Description http://www.ncepower.com Pb Free Product NCE2011E NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2011E ...
Datasheet PDF File NCE2011E PDF File

NCE2011E
NCE2011E

Overview
http://www.
ncepower.
com Pb Free Product NCE2011E NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2011E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a load switch or in PWM applications.
It is ESD protested.
General Features ● VDS = 20V,ID =11A RDS(ON) < 7Ω @ VGS=2.
5V RDS(ON) < 9Ω @ VGS=4.
5V ESD Rating: 2000V HBM ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Schematic diagram Marking and pin assignment Application ●PWM application ●Load switch TSSOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package 2011E NCE2011E TSSOP-8 Reel Size Ø330mm Tape width 12mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed ...


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